Methods, systems, and apparatus for conducting a radical treatment operation prior to conducting an annealing operation

ABSTRACT

Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. provisional patent applicationSer. No. 63/271,000, filed Oct. 22, 2021, which is herein incorporatedby reference in its entirety.

BACKGROUND Field

Aspects of the present disclosure relate to methods, systems, andapparatus for conducting a radical treatment operation on a substrateprior to conducting an annealing operation on the substrate. In oneaspect, the radical treatment operation is conducted in a first chamberand the annealing operation is conducted in a second chamber that iscoupled to the same mainframe of the same cluster tool as the firstchamber.

Description of the Related Art

Substrates for semiconductor operations can be limited in operation. Forexample, substrates can have high sheet resistances and limited gapfill. As another example, substrates can have low grain sizes. Suchlimitations can be especially pervasive at the back end of line (BEOL)for the substrates.

Therefore, there is a need for improved methods, systems, and apparatusthat facilitate lower sheet resistances, improved gap fills, andincreased grain sizes for substrates.

SUMMARY

Aspects of the present disclosure relate to methods, systems, andapparatus for conducting a radical treatment operation on a substrateprior to conducting an annealing operation on the substrate. In oneaspect, the radical treatment operation is conducted in a first chamberand the annealing operation is conducted in a second chamber that iscoupled to the same mainframe of the same cluster tool as the firstchamber.

In one implementation, a method of processing semiconductor substratesincludes pre-heating a substrate, and exposing the substrate to speciesradicals. The exposing of the substrate to the species radicals includesa treatment temperature that is less than 350 degrees Celsius, atreatment pressure that is less than 1.0 Torr, and a treatment time thatis within a range of 2.0 minutes to 12.0 minutes. The method includesannealing the substrate after the exposing of the substrate to thespecies radicals. The annealing includes exposing the substrate tomolecules, an anneal temperature that is 300 degrees Celsius or greater,an anneal pressure that is within a range of 500 Torr to 550 Torr, andan anneal time that is less than 4.0 minutes.

In one implementation, a non-transitory computer readable mediumincludes instructions that, when executed by a processor, cause aplurality of operations to be conducted. The plurality of operationsinclude pre-heating a substrate, and exposing the substrate to speciesradicals. The exposing of the substrate to the species radicals includesa treatment temperature that is less than 300 degrees Celsius, atreatment pressure that is less than 1.0 Torr, and a treatment time thatis within a range of 8.0 minutes to 12.0 minutes. The method includesannealing the substrate after the exposing of the substrate to thespecies radicals. The annealing includes exposing the substrate tomolecules, an anneal temperature that is 300 degrees Celsius or greater,an anneal pressure that is within a range of 500 Torr to 550 Torr, andan anneal time that is less than 4.0 minutes.

In one implementation, a system for processing substrates includes acluster tool that includes a mainframe. The system includes a firstchamber coupled to the mainframe, the first chamber having a firstprocess volume, and a second chamber coupled to the mainframe, thesecond chamber having a second process volume. The system includes acontroller having a processor and a memory having instructions that,when executed by the processor, cause a plurality of operations to beconducted. The plurality of operations include pre-heating a substrate,and exposing the substrate to species radicals. The exposing of thesubstrate to the species radicals includes a treatment temperature thatis less than 300 degrees Celsius, a treatment pressure that is 0.4 Torr,and a treatment time that is within a range of 8.0 minutes to 12.0minutes. The plurality of operations include annealing the substrateafter the exposing of the substrate to the species radicals. Theannealing includes exposing the substrate to molecules, an annealtemperature that is 300-400 degrees Celsius, an anneal pressure that is530 Torr, and an anneal time that is less than 4.0 minutes.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofscope, as the disclosure may admit to other equally effectiveembodiments.

FIG. 1 is a schematic top-view diagram of a system for processingsubstrates, according to one implementation.

FIG. 2A is a schematic partial view of a system for thermally annealingsubstrates, according to one implementation.

FIG. 2B is a schematic view of the system shown in FIG. 2A in a twinchamber configuration, according to one implementation.

FIG. 3 is a schematic partial view of a system for processingsubstrates, according to one implementation.

FIG. 4 is a schematic block diagram view of a method of processingsemiconductor substrates, according to one implementation.

FIG. 5A is a schematic table view of a table having operation parametersfor various implementations according to the present disclosure.

FIG. 5B is a schematic table view of a portion of the table havingoperation parameters for various implementations according to thepresent disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Aspects of the present disclosure relate to methods, systems, andapparatus for conducting a radical treatment operation on a substrateprior to conducting an annealing operation on the substrate. In oneaspect, the radical treatment operation is conducted in a first chamberand the annealing operation is conducted in a second chamber that iscoupled to the same mainframe of the same cluster tool as the firstchamber.

FIG. 1 is a schematic top-view diagram of a system 100 for processingsubstrates, according to one implementation. The system 100 includes acluster tool 180. The cluster tool 180 includes a factory interface 102,one or more transfer chambers 108 (one is shown) with a transfer robot110 disposed therein. The cluster tool 180 includes one or more firstchambers 120, 122 (two are shown) and one or more second chambers 124,126 (two are shown) mounted to a mainframe 151 of the single clustertool 180. The one or more first chambers 120, 122 are radical treatmentchambers that are each configured to conduct a radical treatmentoperation on substrates. The one or more second chambers 124, 126 areanneal chambers that are each configured to conduct an annealingoperation on substrates.

As detailed herein, substrates in the system 100 can be processed in andtransferred between the various chambers without being exposed to anambient environment exterior to the cluster tool 180. For example,substrates can be processed in and transferred between the variouschambers in a low pressure (e.g., 550 Torr or less) or vacuumenvironment (e.g., 20 Torr or less) without breaking the low pressure orvacuum environment between various processes performed on the substratesin the system 100. In one embodiment, which can be combined with otherembodiments, the system 100 provides an integrated cluster tool 180 forconducting processing operations on substrates.

In the implementation shown in FIG. 1 , the factory interface 102includes a docking station 140 and factory interface robots 142 tofacilitate transfer of substrates. The docking station 140 is configuredto accept one or more front opening unified pods (FOUPs) 149. In oneembodiment, which can be combined with other embodiments, each factoryinterface robot 142 includes a blade 148 disposed on one end of therespective factory interface robot 142 configured to transfer substratesfrom the factory interface 102 to the load lock chambers 104, 106.

The load lock chambers 104, 106 have respective doors 150, 152interfacing with the factory interface 102 and respective doors 154, 156interfacing with the one or more first chambers 120, 122. The one ormore first chambers 120, 122 have respective doors interfacing with thetransfer chamber 108, and the one or more second chambers 124, 126 haverespective doors interfacing with the transfer chamber 108.

The doors can include, for example, slit openings with slit valves forpassing substrates therethrough by the transfer robot 110 and forproviding a seal between respective chambers to prevent a gas frompassing between the respective chambers. A door can be open fortransferring a substrate therethrough, and otherwise closed.

The load lock chambers 104, 106, the transfer chamber 108, the firstchambers 120, 122, and the second chambers 124, 126 may be fluidlycoupled to a gas and pressure control system. The gas and pressurecontrol system can include one or more gas pumps (e.g., turbo pumps,cryo-pumps, roughing pumps, vacuum pumps, etc.), gas sources, variousvalves, and conduits fluidly coupled to the various chambers.

The system 100 includes a controller 190 configured to control thesystem 100 or components thereof. For example, the controller 190 maycontrol the operation of the system 100 using a direct control of thechambers 104, 106, 108, 120, 122, 124, 126 of the system 100 or bycontrolling controllers associated with the chambers 104, 106, 108, 120,122, 124, 126. The controller 190 is configured to control the gas andpressure control system. In operation, the controller 190 enables datacollection and feedback from the respective chambers and the gas andpressure control system to coordinate and control performance of thesystem 100.

The controller 190 generally includes a central processing unit (CPU)192, a memory 194, and support circuits 196. The CPU 192 may be one ofany form of a general purpose processor that can be used in anindustrial setting. The memory 194, or non-transitory computer readablemedium, is accessible by the CPU 192 and may be one or more of memorysuch as random access memory (RAM), read only memory (ROM), floppy disk,hard disk, or any other form of digital storage, local or remote. Thesupport circuits 196 are coupled to the CPU 192 and may include cache,clock circuits, input/output subsystems, power supplies, and the like.

The various methods (such as the method 400) and operations disclosedherein may generally be implemented under the control of the CPU 192 bythe CPU 192 executing computer instruction code stored in the memory 194(or in memory of a particular processing chamber) as, e.g., a softwareroutine. When the computer instruction code is executed by the CPU 192,the CPU 192 controls the chambers to conduct processes in accordancewith the various methods and operations described herein. In oneembodiment, which can be combined with other embodiments, the memory 194includes instructions stored therein that, when executed, cause themethods (such as the method 400) and operations (such as the operations402, 403 a, 403 b, 404, 406, 408) described herein to be conducted.

Other processing systems in other configurations are contemplated. Forexample, more or fewer processing chambers may be coupled to a transferapparatus. In the implementation shown in FIG. 1 , the transferapparatus includes the transfer chamber 108. In other implementations,more or fewer transfer chambers (e.g., one transfer chamber) may beimplemented as a transfer apparatus in a system for processingsubstrates.

FIG. 2A is a schematic partial view of a system 200 for thermallyannealing substrates, according to one implementation. The system 200includes a process chamber 228, such as the PYRA® chamber available fromApplied Materials, Inc. of Santa Clara, Calif.

The system 200 can be used as at least part of each of the one or moresecond chambers 124, 126 shown in FIG. 1 that are configured to conductthe annealing operation.

The system 200 also includes a remote plasma source (RPS) 206, and a gasline 207 coupling the remote plasma source 206 to the process chamber228. The present disclosure contemplates that in an in-situ plasmaoperation may be used in place of the RPS 206. The process chamber 228can be used as at least part of each of the one or more second chambers124, 126 shown in FIG. 1 . The process chamber 228 can be a heater basedprocess chamber, or a rapid thermal processing (RTP) chamber, such as arapid thermal anneal (RTA) chamber. The process chamber 228 can be anythermal processing chamber where delivery of at least one metastableradical molecular species and/or radical atomic species to a processingvolume can be used. The process chamber 228 includes a pedestal heater230. The pedestal heater 230 includes a base platform that includes asupport surface 231. The support surface 231 is circular or rectangularin shape. The pedestal heater 230 includes one or more heater elements232 embedded in the pedestal heater 230. The one or more heater elements232 include one or more resistive heater elements, such as wire mesh(es)and/or resistive heating coil(s). The pedestal heater 230 includes aceramic or aluminum body with the one or more heater elements 232embedded in the ceramic or aluminum body. The one or more heaterelements 232 are connected to a power source 233 that supplies power,such as electrical power (for example direct current or alternatingcurrent), to the one or more heater elements 232. The one or more heaterelements 232 and the pedestal heater 230 are used to heat and control atemperature of a substrate (disposed on the pedestal heater 230) and afilm stack of the substrate.

The RPS 206 is coupled to a power source 238. The power source 238 isused as an excitation source to ignite and maintain a plasma in the RPS206. In one embodiment, which can be combined with other embodiments,the RPS 206 includes an inductively coupled plasma (ICP) source, atransformer coupled plasma (TCP) source, and/or a capacitively coupledplasma (CCP) source. In one embodiment, which can be combined with otherembodiments, the power source 238 is a radio frequency (RF) source. Inone example, which can be combined with other examples, the RF sourcedelivers power between about 5 kW to about 9 kW, such as about 7 kW. Inone embodiment, which can be combined with other embodiments, the RPS206 includes one or more microwave resonators.

The RPS 206 is coupled to a first gas source 202 via a first gas conduit203 and a second gas source 204 via a second gas conduit 205. The firstgas source 202 supplies a first gas that includes one or more ofhydrogen, oxygen, argon, and/or nitrogen. The flow rate of the first gasinto the processing volume 208 is within a range of about 10 sccm toabout 100,000 sccm. In one embodiment, which can be combined with otherembodiments, nitrogen is supplied at a flow rate within a range of 10sccm to 50,000 sccm, oxygen is supplied at a flow rate within a range of10 sccm to 30,000 sccm, hydrogen is supplied at a flow rate within arange of 10 sccm to 50,000 sccm, and/or argon is supplied at a flow ratewithin a range of 10 sccm to 50,000 sccm.

The second gas source 204 supplies a second gas, such as oxygen gas.Oxygen plasma is formed using the RPS 206 by introducing about 1 sccm toabout 50,000 sccm of oxygen gas, such as about 10 sccm to 50,000 sccm ofoxygen gas introduced to the processing volume 208.

A vacuum pump 216 is used to maintain a gas pressure in the processingvolume 208. The vacuum pump 216 evacuates post-processing gases and/orby-products of the process via an exhaust 209.

Alternatively, the process chamber 228 can be employed in a twin chamberconfiguration as shown in FIG. 2B. FIG. 2B is a schematic view of thesystem 200 shown in FIG. 2A in a twin chamber configuration, accordingto one implementation. The twin chamber configuration may be used as atleast part of each of the one or more second chambers 124, 126. The twinchamber configuration includes two respective processing regions 228A,228B that are in fluid communication with each other. Each processingregion 228A, 228B can be configured to include one or more of thecomponents, features, aspects, and/or properties of the process chamber228 shown in FIG. 2A.

Each of the processing regions 228A, 228B includes a respective lowerchamber body 280A, 280B. The present disclosure contemplates that theprocessing regions 228A, 228B can share the same lower chamber body. Theprocessing regions 228A, 228B share the same upper chamber body 281. Thepresent disclosure contemplates that the processing regions 228A, 228Bcan each respectively include a distinct upper chamber body.

Each of the processing regions 228A, 228B includes: respective pedestalheaters 230A, 230B similar to the pedestal heater 230; respective one ormore heater elements 232A, 232B similar to the one or more heaterelements 232; and/or respective processing volumes 208A, 208B similar tothe processing volume 208. The processing regions 228A, 228B share asingle RPS 206 that provides the first gas (during a thermal annealoperation) and optionally the oxygen plasma (during an optional laterclean operation to clean the processing regions 228A, 228B) to theprocessing volumes 208A, 208B. The RPS 206 is coupled to the first gassource 202 and the second gas source 204. Each of the processing regions228A, 228B includes a respective process kit 210A, 210B. Each respectiveprocess kit 210A, 210B includes one or more components inside therespective one of the processing regions 228A, 228B used foron-substrate performance, such as liners. The liners can be made fromquartz, ceramic, or metal. The processing regions 228A, 228B are coupledto share a single controller (such as the controller 190), or can becoupled to separate controllers. The present disclosure contemplatesthat portions of the process kits 210A, 2106 may move and/or includeflow openings to allow the first gas and the oxygen plasma to flow tothe exhaust 209. The system 200 can include a valve, disposed forexample along the exhaust 209, such that the first gas and the oxygenplasma are not exhausted and are instead directed to the processingvolumes 208A, 208B during the thermal anneal operation and the optionallater clean operation. Each of the processing regions 228A, 228Bincludes respective gas distribution plates 239A, 239B.

A first substrate 270 and a second substrate 271 are directly supportedrespectively on the pedestal heaters 230A, 230B to undergo a thermalanneal operation.

FIG. 3 is a schematic partial view of a system 300 for processingsubstrates, according to one implementation. The system 300 is similarto the system 200 shown in FIGS. 2A-2B, and includes one or more of theaspects, features, components, and/or properties thereof. The system 300can be used as at least part of the one or more first process chambers120, 122 shown in FIG. 1 that are configured to conduct radicaltreatment operations. The system 300 includes a process chamber havingtwo respective processing regions 328A, 328B. The processing regions328A, 328B are similar to the processing regions 228A, 228B, and includeone or more—but not all—of the aspects, features, components, and/orproperties thereof.

Each of the processing regions 328A, 328B includes: respective pedestalheaters 230A, 230B similar to the pedestal heater 230; respective remoteplasma sources 306A, 306B similar to the RPS 206; respective gas lines207A, 207B similar to the gas line 207; respective one or more heaterelements 232A, 232B similar to the one or more heater elements 232;and/or respective processing volumes 308A, 308B similar to theprocessing volume 208. In one embodiment, which can be combined withother embodiments, the processing regions 328A, 328B can share a singleRPS.

The system 300 includes a first gas source 302 similar to the first gassource 202 described above, and can include one or more of the aspects,features, components, and/or properties thereof. In one embodiment,which can be combined with other embodiments, each respective RPS 306A,306B is coupled to share a single first gas source 302. In oneembodiment, which can be combined with other embodiments, each RPS 306A,306B can be coupled to a distinct first gas source. The first gas source302 supplies one or more gases that include hydrogen, oxygen, and/orargon, such as pure hydrogen or a combination of a first gas flow ofargon and a second gas flow of hydrogen or oxygen at any flow rate ratioof hydrogen or oxygen to argon, such as a flow rate ratio ofhydrogen/oxygen:argon that is within a range of 1:350 to 150:1. In oneembodiment, which can be combined with other embodiments, the first gasflow flows argon at a flow rate within a range of 10 sccm to 3,500 sccmto ignite plasma, and then the second gas flow flows hydrogen or oxygenat a flow rate within a range of 10 sccm to 1,500 sccm to providehydrogen plasma or oxygen plasma.

Each RPS 306A, 306B generates hydrogen radicals using the gas, andsupplies the hydrogen radicals to the respective second processingvolumes 308A, 308B and to the first substrate 270 and the secondsubstrate 271 during a radical treatment operation to clean the firstand second substrates 270, 271 and reduce or remove the contaminantparticles 277 from the film stacks 272 and the first and secondsubstrates 270, 271. The present disclosure contemplates that the secondsubstrate 271 can include film stacks similar to the film stacks 272 ofthe first substrate 270. The system 300 can include one or more ionfilters that filter out ions from the plasma generated using the RPSs306A, 306B.

FIG. 4 is a schematic block diagram view of a method 400 of processingsemiconductor substrates, according to one implementation.

A substrate is positioned in a load lock chamber. Operation 402 includestransferring the substrate from the load lock chamber and to a firstprocess volume of a first chamber.

Operation 403 a includes pre-heating the substrate. The pre-heating ofthe substrate includes exposing the substrate to pre-heat hydrogenmolecules.

Operation 403 b includes purging the pre-heat hydrogen molecules at apurge pressure. In one embodiment, which can be combined with otherembodiments, the purge pressure is within a range of 15 Torr to 530Torr, such 15 Torr to 20 Torr. In one example, a purge gas includinghydrogen may be utilized at a purge pressure of 15 Torr to 20 Torr. Inanother example, a purge gas including argon may be utilized at apressure within a range of 15 Torr to about 530 Torr. In one embodiment,which can be combined with other embodiments, the purge pressure is 18Torr. In one embodiment, which can be combined with other embodiments,the purge pressure is within a range of 500 Torr to 550 Torr. In oneembodiment, which can be combined with other embodiments, the purgepressure is 530 Torr.

Operation 404 includes exposing the substrate to species radicals. Theexposing of the substrate to the species radicals includes a treatmenttemperature that is less than 350 degrees Celsius, such as less than 300degrees Celsius, a treatment pressure that is less than 1.0 Torr, and atreatment time that is within a range of 8.0 minutes to 12.0 minutes. Inone embodiment, which can be combined with other embodiments, thetreatment temperature is within a range of 150 degrees Celsius to 250Celsius degrees, such as 175 degrees Celsius to 225 degrees Celsius,such as 195 degrees Celsius to 205 degrees Celsius, the treatmentpressure is within a range of 0.35 Torr to 0.45 Torr, and the treatmenttime is within a range of 1 minute to 60 minutes, such as 2 minutes to30 minutes, such as 2 minutes to 15 minutes, such as 2 minutes to 12minutes, for example 9.5 minutes to 10.5 minutes. In one embodiment,which can be combined with other embodiments, the treatment pressure is0.4 Torr. In one embodiment, which can be combined with otherembodiments, the treatment temperature is 200 degrees Celsius, and thetreatment time is 10 minutes.

The species radicals are supplied to the first internal volume at a flowrate within a range of 1,300 SCCM to 1,400 SCCM for a 300 mm diametersubstrate. In one embodiment, which can be combined with otherembodiments, the flow rate is 1,350 SCCM. In one embodiment, which canbe combined with other embodiments, the species radicals include atomichydrogen radicals. In one embodiment, which can be combined with otherembodiments, the species radicals include one or more of oxygen (O₂),nitrogen (N₂), and/or helium (He).

The species radicals of operation 404 can be generated using one or moreof a remote plasma source (RPS), an inductively coupled plasma (ICP)source, and/or one or more microwave resonators for in-situ generation.

Operation 406 includes transferring the substrate from the first processvolume of the first chamber and to a second process volume of a secondchamber through a transfer volume of a transfer chamber. The transfervolume of the transfer chamber is maintained at a transfer pressure thatis within a range of 500 Torr to 550 Torr.

During the transferring of the substrate into and out of the firstchamber (such as the transferring of operation 402 and/or thetransferring of operation 406), argon (Ar) is supplied as a purge gas tothe first process volume of the first chamber at a first transferpressure and a first transfer flow rate. In one embodiment, which can becombined with other embodiments, the first transfer pressure is within arange of 16 Torr to 20 Torr and the first transfer flow rate is within arange of 2.5 liters per minute (LPM) to 3.5 LPM. In one embodiment,which can be combined with other embodiments, the first transferpressure is 18 Torr and the first transfer flow rate is 3.0 LPM. In oneembodiment, which can be combined with other embodiments, the firsttransfer pressure is within a range of 500 Torr to 550 Torr and thefirst transfer flow rate is within a range of 10.0 LPM to 12.0 LPM. Inone embodiment, which can be combined with other embodiments, the firsttransfer pressure is 530 Torr and the first transfer flow rate is 11.0LPM. In one embodiment, which can be combined with other embodiments,the first transfer pressure is within a range of 500 Torr to 550 Torrand the first transfer flow rate is within a range of 24.0 LPM to 26.0LPM. In one embodiment, which can be combined with other embodiments,the first transfer pressure is 530 Torr and the first transfer flow rateis 25.0 LPM.

During one or more first buffer periods (such as one or more firstdowntime periods) for the first chamber, nitrogen (N₂) is supplied tothe first process volume of the first chamber at a first buffer pressureand a first buffer flow rate. In one embodiment, which can be combinedwith other embodiments, the first buffer pressure is within a range of15 Torr to 20 Torr and the first buffer flow rate is within a range of2.5 LPM to 3.5 LPM. In one embodiment, which can be combined with otherembodiments, the first buffer pressure is 18 Torr and the first bufferflow rate is 3.0 LPM. In one embodiment, which can be combined withother embodiments, the first buffer pressure is within a range of 500Torr to 550 Torr and the first buffer flow rate is within a range of40.0 LPM to 50.0 LPM. In one embodiment, which can be combined withother embodiments, the first buffer pressure is 530 Torr and the firstbuffer flow rate is 45.0 LPM. In one embodiment, which can be combinedwith other embodiments, the first buffer pressure is 530 Torr and thefirst buffer flow rate is 50.0 LPM.

During the transferring of the substrate into and out of the secondchamber (such as the transferring of operation 406), nitrogen (N₂) issupplied as a purge gas to the second process volume of the secondchamber at a second transfer pressure and a second transfer flow rate.In one embodiment, which can be combined with other embodiments, thesecond transfer pressure is within a range of 500 Torr to 550 Torr andthe second transfer flow rate is within a range of 14.0 LPM to 16.0 LPM.In one embodiment, which can be combined with other embodiments, thesecond transfer pressure is 530 Torr and the second transfer flow rateis 15.0 LPM.

During one or more second buffer periods (such as one or more seconddowntime periods) for the second chamber, nitrogen (N₂) is supplied tothe second process volume of the second chamber at a second bufferpressure and a second buffer flow rate. In one embodiment, which can becombined with other embodiments, the second buffer pressure is within arange of 500 Torr to 550 Torr and the second buffer flow rate is withina range of 40.0 LPM to 50.0 LPM. In one embodiment, which can becombined with other embodiments, the second buffer pressure is 530 Torrand the second buffer flow rate is 45.0 LPM. In one embodiment, whichcan be combined with other embodiments, the second buffer pressure is530 Torr and the second buffer flow rate is 50.0 LPM.

Operation 406 can include an air break period where the substrate isexposed to ambient air prior to being transferred into the secondprocess volume of the second chamber. In one embodiment, which can becombined with other embodiments, the air break period occurs while thesubstrate is positioned in-situ in the cluster tool 180. In oneembodiment, which can be combined with other embodiments, the air breakperiod is within a range of 55.0 minutes to 65.0 minutes, such as 60.0minutes.

Operation 408 includes annealing the substrate after the exposing of thesubstrate to the species radicals. The annealing includes an annealtemperature that is 300 degrees Celsius or greater, such as 300 degreesCelsius to 400 degrees Celsius, an anneal pressure that is within arange of 500 Torr to 550 Torr, and an anneal time that is less than 4.0minutes. In one embodiment, which can be combined with otherembodiments, the anneal temperature is within a range of 300 degreesCelsius to 305 degrees Celsius, the anneal pressure is within a range of525 Torr to 535 Torr, and the anneal time is within a range of 1.5minutes to 2.5 minutes. In one embodiment, which can be combined withother embodiments, the anneal temperature is 300 degrees Celsius, andthe anneal time is 2.0 minutes. In one embodiment, which can be combinedwith other embodiments, the anneal temperature is 350 degrees Celsius,and the anneal pressure is 530 Torr. In one embodiment, which can becombined with other embodiments, the annealing environment includeshydrogen (H₂). In one embodiment, which can be combined with otherembodiments, the annealing environment additionally or alternativelyincludes one or more of hydrogen (H₂), dinitride (N₂), and/or ammonia(NH₃).

During the annealing of operation 408, the substrate can be heated usingone or more lamp heaters and/or one or more resistive heaters that heata pedestal on which the substrate is supported.

The present disclosure contemplates that the method 400 can be conductedafter other semiconductor processing operations, such as after adeposition operation (e.g., a chemical vapor deposition (CVD)operation), an etching operation, and/or a lithography operation.

The pre-heating of the substrate (of operation 403 a) and the exposingof the substrate to the hydrogen radicals (of operation 404) occurs inthe first process volume of the first chamber, and the annealing of thesubstrate (of operation 408) occurs in the second process volume of thesecond chamber. The first chamber and the second chamber are coupled toa mainframe of a single cluster tool.

The present disclosure contemplates that the operations 402, 403 a, 403b, 404, 406, 408 can be repeated on the substrate being processed. Theconducting of the method 400 in one or more iterations reduces a sheetresistance of one or more metals of the substrate. In one embodiment,which can be combined with other embodiments, the one or more metalsinclude one or more of copper (Cu), ruthenium (Ru), and/or dinitride(N₂).

The operation parameters described herein can be used in relation to themethod 400. The operation parameters facilitate reduced sheetresistances, improved gap fills, and increased grain sizes forsubstrates (such as substrates having one or more metals). The operationparameters also facilitate maintaining impurity levels (such as levelsof carbon, hydrogen, and oxygen impurities) within similar andacceptable levels.

As an example, the operation parameters disclosed for the treatmenttemperature, the treatment pressure, the treatment time, the annealtemperature, the anneal pressure, and the anneal time facilitate reducedsheet resistances, improved gap fills, and increased grain sizes whilefacilitating maintained impurity levels within similar and acceptablelevels.

FIG. 5A is a schematic table view of a portion of a table 500 havingoperation parameters for various implementations according to thepresent disclosure.

FIG. 5B is a schematic table view of a portion of the table 500 havingoperation parameters for various implementations according to thepresent disclosure.

The table 500 shown in FIGS. 5A and 5B shows seven implementations(Implementation 1-Implementation 7) and the operation parameters usedtherein.

In accordance with the present disclosure, it is believed thatImplementation 7 facilitates achieving the largest reduction in sheetresistance of substrates having metal(s) while maintaining impuritylevels (such as levels of carbon, hydrogen, and oxygen impurities)within similar and acceptable levels.

Benefits of the present disclosure include reduced sheet resistances(such as sheet resistances of one or more metals—for example, Cu(Copper)—of substrates), improved gap fills, increased grain sizes, andmaintained impurity levels within similar and acceptable levels. Suchbenefits can be facilitated at the back end of line (BEOL) for thesubstrates.

Such benefits can be achieved on a single mainframe of a singleintegrated cluster tool, facilitating increased efficiencies, reducedfootprints, reduced costs, and increased output.

It is contemplated that one or more aspects disclosed herein may becombined. As an example, one or more aspects, features, components,and/or properties of the system 100, the cluster tool 180, the system200, the system 300, the method 400, and/or the table 500 may becombined. Moreover, it is contemplated that one or more aspectsdisclosed herein may include some or all of the aforementioned benefits.As an example, one or more of the operations and/or the operationparameters described in relation to the system 100, the system 200,and/or the system 300 can be combined with the operations and/or theoperation parameters described in relation to the method 400 and/or thetable 500.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof. The presentdisclosure also contemplates that one or more aspects of the embodimentsdescribed herein may be substituted in for one or more of the otheraspects described. The scope of the disclosure is determined by theclaims that follow.

1. A method of processing semiconductor substrates, comprising:pre-heating a substrate; exposing the substrate to species radicals, theexposing of the substrate to the species radicals comprising: exposingthe substrate to a treatment temperature that is less than 300 degreesCelsius, exposing the substrate to a treatment pressure that is lessthan 1.0 Torr, and exposing the substrate for a treatment time that iswithin a range of 2.0 minutes to 12.0 minutes; and annealing thesubstrate after the exposing of the substrate to the species radicals,the annealing comprising: exposing the substrate to molecules, exposingthe substrate to an anneal temperature that is 300 degrees Celsius orgreater, exposing the substrate to an anneal pressure that is within arange of 500 Torr to 550 Torr, and exposing the substrate for an annealtime that is less than 4.0 minutes.
 2. The method of claim 1, wherein asheet resistance of one or more metals of the substrate is reduced. 3.The method of claim 2, wherein the one or more metals comprise one ormore of copper (Cu), ruthenium (Ru), or dinitride (N₂).
 4. The method ofclaim 1, wherein the species radicals comprise atomic hydrogen radicals,and the molecules comprises hydrogen (H₂).
 5. The method of claim 1,wherein the species radicals comprise one or more of oxygen (O₂),nitrogen (N₂), or helium (He).
 6. The method of claim 1, wherein themolecules comprise one or more of hydrogen (H₂), dinitride (N₂), orammonia (NH₃).
 7. The method of claim 1, wherein: the treatmenttemperature is within a range of 150 degrees Celsius to 250 degreesCelsius; the treatment pressure is within a range of 0.35 Torr to 0.45Torr; the treatment time is within a range of 9.5 minutes to 10.5minutes; the anneal temperature is within a range of 300 degrees Celsiusto 305 degrees Celsius; the anneal pressure is within a range of 525Torr to 535 Torr; and the anneal time is within a range of 1.5 minutesto 2.5 minutes.
 8. The method of claim 1, wherein the pre-heating of thesubstrate and the exposing of the substrate to the species radicalsoccurs in a first process volume of a first chamber, and the annealingof the substrate occurs in a second process volume of a second chamber.9. The method of claim 8, wherein the first chamber and the secondchamber are coupled to a mainframe of a single cluster tool.
 10. Themethod of claim 8, wherein the pre-heating of the substrate comprisesexposing the substrate to hydrogen molecules, and the method furthercomprises purging the hydrogen molecules at a purge pressure prior tothe exposing of the substrate to the species radicals.
 11. The method ofclaim 10, wherein the purge pressure is within a range of 15 Torr to 20Torr.
 12. The method of claim 10, wherein the purge pressure is within arange of 500 Torr to 550 Torr.
 13. The method of claim 10, wherein thespecies radicals are supplied to the first process volume at a flow ratewithin a range of 1,300 SCCM to 1,400 SCCM.
 14. The method of claim 8,further comprising: positioning the substrate in a load lock chamber;transferring the substrate from the load lock chamber and to the firstprocess volume of the first chamber prior to the pre-heating of thesubstrate; and transferring the substrate from the first process volumeof the first chamber and to the second process volume of the secondchamber through a transfer volume of a transfer chamber, wherein thetransfer volume of the transfer chamber is maintained at a transferpressure that is within a range of 500 Torr to 550 Torr.
 15. Anon-transitory computer readable medium comprising instructions that,when executed by a processor, cause a plurality of operations to beconducted, the plurality of operations comprising: pre-heating asubstrate; exposing the substrate to species radicals, the exposing ofthe substrate to the species radicals comprising: exposing the substrateto a treatment temperature that is less than 300 degrees Celsius,exposing the substrate to a treatment pressure that is less than 1.0Torr, and exposing the substrate for a treatment time that is within arange of 8.0 minutes to 12.0 minutes; and annealing the substrate afterthe exposing of the substrate to the species radicals, the annealingcomprising: exposing the substrate to molecules, exposing the substrateto an anneal temperature that is 300 degrees Celsius or greater,exposing the substrate to an anneal pressure that is within a range of500 Torr to 550 Torr, and exposing the substrate for an anneal time thatis less than 4.0 minutes.
 16. The non-transitory computer readablemedium of claim 15, wherein: the treatment temperature is within a rangeof 195 degrees Celsius to 205 degrees Celsius; the treatment pressure iswithin a range of 0.35 Torr to 0.45 Torr; the treatment time is within arange of 9.5 minutes to 10.5 minutes; the anneal temperature is within arange of 300 degrees Celsius to 305 degrees Celsius; the anneal pressureis within a range of 525 Torr to 535 Torr; and the anneal time is withina range of 1.5 minutes to 2.5 minutes.
 17. The non-transitory computerreadable medium of claim 15, wherein the pre-heating of the substratecomprises exposing the substrate to pre-heat hydrogen molecules, and theplurality of operations further comprise purging the pre-heat hydrogenmolecules at a purge pressure prior to the exposing of the substrate tothe species radicals.
 18. The non-transitory computer readable medium ofclaim 17, wherein the purge pressure is within a range of 15 Torr to 20Torr.
 19. The non-transitory computer readable medium of claim 17,wherein the purge pressure is within a range of 500 Torr to 550 Torr.20. A system for processing substrates, comprising: a cluster toolcomprising a mainframe; a first chamber coupled to the mainframe, thefirst chamber comprising a first process volume; a second chambercoupled to the mainframe, the second chamber comprising a second processvolume; a controller comprising a processor and a memory comprisinginstructions that, when executed by the processor, cause a plurality ofoperations to be conducted, the plurality of operations comprising:pre-heating a substrate; exposing the substrate to species radicals inthe first process volume of the first chamber, the exposing of thesubstrate to the species radicals comprising: exposing the substrate toa treatment temperature that is less than 300 degrees Celsius, exposingthe substrate to a treatment pressure that is less than 1.0 Torr, andexposing the substrate for a treatment time that is within a range of8.0 minutes to 12.0 minutes; and annealing the substrate after theexposing of the substrate to the species radicals in the second processvolume of the second chamber, the annealing comprising: exposing thesubstrate to molecules, exposing the substrate to an anneal temperaturethat is 300 degrees Celsius or greater, exposing the substrate to ananneal pressure that is within a range of 500 Torr to 550 Torr, andexposing the substrate for an anneal time that is less than 4.0 minutes.